Observation of random telegraph signal in SiC Schottky diodes

摘要

Discrete time switching events are observed when measuring the current of silicon carbide Schottky diodes. RTS noise occurs whenever an excess current is measured. The random telegraph signal (RTS) is shown to originate from localised defective areas, whose conductivity may be modulated by the single trapping/detrapping of an electron in the depletion layer, in the neighbourhood of the localised current path.