InGaP InGaAs PHEMT with high IP3 for low noise applications

摘要

A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.