Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

摘要

The temperature-dependent DC characteristics and noise performance of In_(0.49)Ga_(0.51)P/In_(0.15)Ga_(0.85)As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25x160 μm~2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In_(0.49)Ga_(0.51)P/ In_(0.15)Ga_(0.85)As and Al_(0.25)Ga_(0.75)As/In_(0.15)Ga_(0.85)As low noise PHEMTs are also created. It is found that the high temperature performance of In_(0.49)Ga_(0.51)P/In_(0.15)Ga_(0.85)As PHEMT is much better than that of Al_(0.25)Ga_(0.75)As/ln_(0.15)Ga_(0.85)As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.