机译:循环诱导的Intercell捕获电荷对3-D NAND闪存中的保留电荷损耗的影响
Univ Chinese Acad Sci Beijing 100049 Peoples R China|Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Univ Chinese Acad Sci Beijing 100049 Peoples R China|Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China|Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Univ Chinese Acad Sci Beijing 100049 Peoples R China|Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Univ Chinese Acad Sci Beijing 100049 Peoples R China|Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
Univ Chinese Acad Sci Beijing 100049 Peoples R China|Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China|Yangtze Memory Technol Co Ltd Wuhan 430205 Peoples R China;
3D NAND flash memory; data retention; intercell trapped charge; PE cycling.;
机译:3-D充电陷阱NAND闪存中的保留相关读干扰误差:观察,分析和解决方案
机译:单元间陷阱电荷对垂直NAND闪存的影响
机译:横向电荷迁移诱导3D电荷捕获NAND闪存中的异常读取干扰
机译:用于改善3D NAND闪存数据保留的单元间陷阱电荷的研究
机译:高k电介质的电荷陷阱闪存。
机译:通过利用氧化铝的高介电常数和高带隙低功率和闪光阵列的低功率和闪光阵列的保留增强
机译:循环诱导的Intercell捕获电荷对3-D NAND闪存中的保留电荷损耗的影响