Recombination lifetime of short-base-width devices using the pulsed MOS capacitor technique

摘要

The authors point out that the technique of D.K. Schroder, J.D. Whitfield, and C.J. Varker (see ibid., vol.ED-31, no.4, p.462, 1984) for the determination of recombination lifetime using pulsed MOS capacitors at elevated temperatures does not consider lateral quasi-neutral bulk generation and the time dependence of the width of the space-charge region in short-base-width devices (i.e. epitaxial wafers). Consequently, calculations using this technique indicate that the recombination lifetime is a function of device diameter. A simple one-dimensional approach is proposed in which bulk generation in the lateral area of the device is taken into consideration resulting in a fairly uniform recombination lifetime that is independent of the device diameter for short-base-width devices.