Modeling electron transport in InGaAs-based resonant-tunneling hot-electron transistors

摘要

The modeling of the resonant-tunneling hot-electron transistor (RHET) is described. In an analysis of the resonant-tunneling barrier, the Schrodinger and Poisson equations are solved self-consistently. The electron transport in the base and the collector barrier region is simulated using the Monte Carlo method, taking account of the space charge in the collector barrier. The model used includes the effect of coupled plasmon-LO phonon scattering and electron-electron scattering in the base region. The transit time is calculated in the base and the collector barrier region. The 50-nm base transient time is 0.059 ps. On the other hand, the 200-nm collector barrier transit time is larger than 1 ps due to intervalley scattering in the collector barrier region. it is shown that the collector barrier transit time can be reduced to 0.089 ps in the 50-nm collector barrier RHET at a collector-base voltage of 0.5 V.