Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit

摘要

The first resonant-tunneling hot-electron transistor (RHET) EXCLUSIVE-NOR integrated circuit that operates at room temperature is demonstrated. The XNOR circuit consisting of a single resonant-tunneling transistor and four thin-film resistors, exhibits a 500-mV output voltage swing between the high- and low-logic levels when biased with a 1.8-V supply. The transistor, which features a novel InGaP collector barrier, has a peak current density of 4*10/sup 4/ A-cm/sup -2/, a common-base transfer coefficient of 0.9, and a peak-to-valley current ratio of 10:1 when operated in a common-emitter mode.