400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers

摘要

Four-hundred-dots-per-inch (dpi) sensors, including poly-Si thin-film-transistor (TFT) scanning circuits, and a-Si photodiodes fabricated on borosilicate glass have been developed. This contact-type image sensor contains TFT analog buffer amplifiers in the readout circuits. The scanning circuits can operate in a frequency range between 200 kHz and 1 MHz. The readout circuits incorporating TFT analog impedance converters decrease photodiode impedance by more than three orders of magnitude and improve the linearity between illumination intensity and the sensor output. High-resolution reading is achieved by the new contact-type linear image sensors with a storage time of 2 ms/line.