Ge/sub x/Si/sub 1-x//silicon inversion-base transistors: experimental demonstration

摘要

The fabrication, material characterization, and electrical evaluation of the p-channel Ge/sub x/Si/sub 1-x//silicon inversion-base transistor (BICFET) are described. The BICFET was one of the first bipolar devices to take advantage of the breakthroughs in advanced Ge/sub x/Si/sub 1-x//Si processing technology, to which its p-channel implementation is ideally suited. At this time, the performance limitations of the Ge/sub x/Si/sub 1-x//Si BICFET are set only by the current fabrication technology, and not by limits imposed by its physical principles of operation. The electrical results presented include both the unipolar characteristics, in which the BICFET is configured as a heterojunction FET, and the bipolar characteristics, which is the intended high-performance mode of operation. The experimental results presented are in good agreement with theoretical study.