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A new methodology for design of BiCMOS gates and comparison with CMOS

机译:BiCMOS栅极设计和与CMOS比较的新方法

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A gate comparison methodology is presented to accurately compare the performance of an arbitrary BiCMOS logic gate with a pure CMOS gate. The concept of the sizing plane (SP) is introduced as a geometrical framework in which the gate comparison methodology is represented. The sizing plane is also shown to be an elegant platform to represent the constraints and tradeoffs in BiCMOS gate design and this is demonstrated by an example for a 1- mu m BiCMOS technology. To illustrate the comparison methodology, BiCMOS and CMOS gates are fabricated in a 2- mu m BiCMOS technology. The measured performance results are presented and interpreted using the sizing plane. A technology comparison methodology is proposed that predicts the relative performance of a BiCMOS versus a pure CMOS implementation of any arbitrary block of digital logic.
机译:提出了一种门比较方法,以准确比较任意BiCMOS逻辑门和纯CMOS门的性能。尺寸调整平面(SP)的概念作为表示门比较方法的几何框架而引入。尺寸平面还显示出是一个优雅的平台,可以表示BiCMOS栅极设计中的限制和折衷,并且以1微米BiCMOS技术为例对此进行了演示。为了说明比较方法,BiCMOS和CMOS栅极采用2微米BiCMOS技术制造。测出的性能结果使用尺寸平面进行显示和解释。提出了一种技术比较方法,该方法可以预测BiCMOS与任意数字逻辑模块的纯CMOS实现的相对性能。

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