A pseudomorphic GaInP/InP MESFET with improved device performance

摘要

A high-bandgap GaInP epitaxial material grown on InP to increase the Schottky barrier height of the InP MESFET is discussed. The Schottky gate materials used in this study were Au and Pt/sub 2/Si. The pseudomorphic GaInP/InP MESFET with an Au gate has a Schottky barrier height of 0.54 eV, and the reverse leakage current of the device is 10/sup -2/ times lower than that of the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET are 66.7 and 104.2 mS/mm respectively for the 5- mu m-gate-length GaInP/InP MESFET.