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Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing.

机译：通过优化植入前和植入后晶圆退火，改善了离子植入MESFET器件的噪声性能。

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In this article we illustrate how the noise performance of ion-implanted MESFET devices can be appreciably improved by means of optimised pre and post implant annealing cycle. With this technique the 12 GHz noise figure of 0.5x300 um devices is reduced from 2.7 dB to 1.8 dB.

机译：在本文中，我们说明了如何通过优化的注入前和注入后退火周期，明显改善离子注入MESFET器件的噪声性能。使用此技术，0.5x300 um器件的12 GHz噪声系数从2.7 dB降低到1.8 dB。

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Lanzieri C.; DEustacchio P.; Rescigno N.; Cetronio A.;
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年度 1990
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专利

1. High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFETs with Au/WSiN T-shaped gate [J] . Onodera K., Nishimura K. IEEE Transactions on Electron Devices . 1993,第1期

机译：具有Au / WSiN T形栅极的完全离子注入GaAs MESFET的高微波和超低噪声性能
2. On the speed and noise performance of direct ion-implanted GaAs MESFETs [J] . Feng M., Laskar J. IEEE Transactions on Electron Devices . 1993,第1期

机译：直接离子注入GaAs MESFET的速度和噪声性能
3. Comment on "On the speed and noise performance of direct ion-implanted GaAs MESFET's" [with reply] [J] . Moll N., Feng M. IEEE Transactions on Electron Devices . 1994,第1期

机译：评论“关于直接离子注入GaAs MESFET的速度和噪声性能” [并回复]
4. High device performance of ion-implanted WN 0.25 mu m gate MESFET fabricated using I-line photolithography with application to MMIC [C] . EUng-Gie Oh, Jeon-Wook yang, Chul-Soon Park, International symposium on compound semiconductors . 1996

机译：使用I线光刻技术制造的离子注入WN 0.25μm栅极MESFET的高器件性能，并应用于MMIC
5. Millimeter-wave low-noise amplifiers using cost-effective ion-implanted MESFETs and coplanar transmission lines. [D] . Scherrer, Doniel Raymond. 1996

机译：使用经济高效的离子注入MESFET和共面传输线的毫米波低噪声放大器。
6. Ion-implanted polytetrafluoroethylene enhances Saccharomyces cerevisiae biofilm formation for improved immobilization [O] . Clara T. H. Tran, Alexey Kondyurin, Stacey L. Hirsh, 2012

机译：离子注入的聚四氟乙烯增强了酿酒酵母生物膜的形成从而改善了固定性
7. Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing. [O] . Lanzieri C., DEustacchio P., Rescigno N., 1990

机译：通过优化植入前和植入后晶圆退火，改善了离子植入MESFET器件的噪声性能。
8. Influence of Ion-Implanted Profiles on the Performance of GaAs MESFET's and MMIC Amplifiers [R] . Pavlidis, D., Cazaux, J. L., Graffeuil, J. 1988

机译：离子注入剖面对Gaas mEsFET和mmIC放大器性能的影响

Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing.

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