Pseudomorphic Heterostructure Materials for High Performance Devices

摘要

Using the planar-doping technique, Si has been shown to be amphoteric on (311)AInAlAs/InGaAs/InP grown by molecular beam epitaxy and excellent modulation-doped field effect transistors have been demonstrated. Through the use of an AlN/GaN strained superlattice buffer layer, high quality GaN layers were obtained. Crystalline SiC thin layers have been grown on 125 mm silicon-on-insulator (SOI) substrates. These two techniques have also been combined to synthesize the first GaN on SiC on SOI structure. Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. jg.