Optically triggered In/sub 0.53/Ga/sub 0.47/As-transferred-electron devices for repeater applications

摘要

The generation of current pulses in In/sub 0.53/Ga/sub 0.47/As-transfer devices by short optical pulses is demonstrated. The triggering conditions for the generation of single domains are determined with respect to optical peak power, doping concentration, and location of irradiation. The sensitivity and gain of a proposed repeater circuit are calculated.