High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices

摘要

Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].