Enhanced electron trapping in reoxidized nitrided oxide dielectric at 77 K

Das N.C.; Nathan V.

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Enhanced electron trapping in reoxidized nitrided oxide dielectric at 77 K

机译：在77 K的重氧化氮化氧化物电介质中增强的电子俘获

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The results of experiments on the electron trapping effect in ONO devices at cryogenic temperature are presented and compared with results for SiO/sub 2/ devices. Various types of ONO devices are used in the experiment in order to determine the mechanism of enhanced electron trapping phenomena in these devices.

机译：给出了在低温下ONO器件中电子俘获效应的实验结果，并将其与SiO / sub 2 /器件的结果进行了比较。实验中使用了各种类型的ONO器件，以确定这些器件中增强的电子俘获现象的机理。

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《IEEE Transactions on Electron Devices》 |1993年第6期|P.1179-1181|共3页
作者
Das N.C.; Nathan V.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides [J] . Wu A.T., Murali V. IEEE Electron Device Letters . 1989,第10期

机译：氮化和再氧化的氮化氧化物中电荷陷阱的栅极偏置极性依赖性和随时间变化的介电击穿
2. Electron trapping during irradiation in reoxidized nitrided oxide [J] . Mallik A., Vasi J. IEEE Transactions on Nuclear Science . 1993,第6期

机译：辐照过程中重氧化氮氧化物中的电子俘获
3. Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics [J] . Ramgopal Rao V., Sharma D.K. IEEE Transactions on Electron Devices . 1996,第9期

机译：氧化后的氮化栅极电介质在辐照下产生中性电子陷阱
4. Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics [C] . L.K. Han, Univ. of Texas/Austin, Austin, Microelectronic Device and Multilevel Interconnection Technology . 1995

机译：N2O再氧化的NH3氮化N2O氧化物作为栅极电介质的n和p-MOSFET的电学特性
5. OPTICAL ABSORPTION, LUMINESCENCE AND PHOTOBLEACHING OF TRAPPED INTERMEDIATES FORMED IN 3-METHYLPENTANE GLASS BY GAMMA-IRRADIATION AT 77 K. OPTICAL SPECTRA OF MERCURY PHOTOSENSITIZATION REACTION PRODUCTS IN 3-METHYLPENTANE GLASS AT 77 K. [D] . MORINE, GERALD H. 1975

机译：在77 K时通过γ射线辐照形成的3-甲基戊烷玻璃中的中间体的光吸收，发光和光解。3，3-庚烷玻璃中的光致光敏反应产物的光光谱。
6. Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment [O] . Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson, -1

机译：六方氮化硼介电环境中WS2晶体管的电子传输
7. THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS [O] . MALLIK A, VASI J, CHANDORKAR AN 1993

机译：氧化亚硝酸栅介质中孔陷阱的性质
8. Hole Trapping in Reoxidized Nitrided Silicon Dioxide. [R] . Dunn, G. J. 1989

机译：再氧化氮化二氧化硅中的空穴俘获。

Enhanced electron trapping in reoxidized nitrided oxide dielectric at 77 K

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