A physically-based C/sub /spl infin//-continuous fully-depleted SOI MOSFET model for analog applications

摘要

An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.