A hot-carrier degradation mechanism and electrical characteristics in S/sup 4/D n-MOSFET's

摘要

A silicided silicon-sidewall source and drain (S/sup 4/D) nMOSFET is demonstrated and its hot carrier reliability is investigated for the first time. This S/sup 4/D nMOSFET exhibited high drain current and well-suppressed short channel effects concurrently. In spite of the impact ionization rate issue, the S/sup 4/D structure offers a major improvement in current and transconductance degradations as compared with the LDD structure. The mechanism of the improved hot carrier reliability is explained using a two-dimensional (2-D) simulation.