Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy

摘要

We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 /spl mu/m effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (R/sub s/d/=333 /spl Omega//spl middot//spl mu/m) were obtained.