New Organometallic Vapor Phase Epitaxy Reactor for Highly Uniform Epitaxy

摘要

We have designed and built a new organometallic vapor phase epitaxy (OMVPE)reactor for the growth of thin films of compound semiconductors such as GaAs and AlGaAs. The reactor grows highly uniform and reproducible epitaxial layers that can be fabricated into various electronic and optoelectronic devices. To obtain such precision, we designed the reactor by using both gas-flow visualization and numerical modeling. The design results in uniform laminar flow and short gas residence times, which are critical for obtaining uniform growth and abrupt interfaces between epitaxial layers over large surface areas. High-performance quantum-wall diode lasers designed to pump solid state lasers have been fabricated from such uniform layers. Reprints.