ORGANOMETALLIC COMPOUND FOR ORGANOMETALLIC VAPOR PHASE EPITAXY

摘要

PROBLEM TO BE SOLVED: To obtain a new compound, an organometallic compound for forming a thin film of ruthenium or a ruthenium oxide on the surface of a substrate by an organometallic vapor phase epitaxial method, and useful especially for electrode materials for semiconductor devices or parts thereof and the like. SOLUTION: This compound is a compound of the formula (at least one of R1 to R5, and R1' to R5' is a group CH2CH3, CH2CH2CH3, CH2CH2CH2CH3 or the like), for example, a bis(ethylcyclopentadiene)ruthenium. The compound of the formula is obtained, for example, in the case of the above-exemplified compound, by dissolving and mixing ruthenium chloride and trimethylsilylethylcyclopentadiene in ethyl alcohol, and conducting a reflux treatment for 24 h. By using this compound for an organometallic vapor phase epitaxy, the rate of vaporizing the raw material can be easily controlled, and the rate of thin film formation made uniform, thereby ruthenium thin films or the like excellent in thin film precision can be formed.