Metal node contact TFT SRAM cell for high-speed, low-voltage applications

摘要

The parasitic diode contact in the bottom gate thin-film transistor (TFT) static random access memory (SRAM) cell limits its high node charging current. The charging of 15 fF load capacitor to 0.1-0.2 V below V/sub cc/ takes about 0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM cell, whose charging to full V/sub cc/ is seven times faster.