An 0.1-/spl mu/m asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

摘要

A new 0.1-/spl mu/m MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.