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Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability

机译：优化单个光晕p-MOSFET注入参数以提高模拟性能和可靠性

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The effect of Channel Hot Carrier (CHC) stressunder typical analog operating conditions is studied forp-MOSFETs. Our detailed characterization results showthat Single Halo devices not only show improvedperformance, but also are immune to CHC degradationunder various operating conditions.

机译：对于典型的MOSFET，研究了在典型模拟工作条件下沟道热载流子（CHC）应力的影响。我们详细的表征结果表明，Single Halo器件不仅显示出改进的性能，而且在各种操作条件下均不受CHC降解的影响。

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JHA NK; RAMGOPAL RAO V; WOO JCS;
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年度 2002
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正文语种 eng
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机译：带有氟注入的p-MOSFET的改进的电特性和可靠性
2. Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications [J] . Hakim N., Rao V.R., Vasi J., IEEE transactions on device and materials reliability . 2005,第1期

机译：单环（SH）绝缘体上硅（SOI）nMOSFET在模拟应用中具有出色的热载流子可靠性
3. Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect [J] . Tang YT, Cerrina C, Waite AM, Semiconductor science and technology . 2005,第8期

机译：晕注入SiGe沟道p-MOSFET伪器件中以减少短沟道效应
4. Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability [C] . Neeraj K. Jha, V. Ramgopal Rao, J.C.S.Woo European solid-state device research conference . 2002

机译：优化单晕P-MOSFET植入参数，可改进模拟性能和可靠性
5. Improving DRAM Performance, Security, and Reliability by Understanding and Exploiting DRAM Timing Parameter Margins [D] . Kim, Jeremie S. 2020

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6. Optimization of mass spectrometric parameters improve the identification performance of capillary zone electrophoresis for single-shot bottom-up proteomics analysis [O] . Zhenbin Zhang, Norman J. Dovichi -1

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7. Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications [O] . JHA NK, BAGHINI MS, RAMGOPAL RAO V 2002

机译：用于模拟应用的单光晕深亚微米p-MOSFET的性能和可靠性

Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability

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