Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

摘要

Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SiC substrates with N/sup +/ epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm/sup 2//Vs and an accumulation-mode surface mobility of 45 cm/sup 2//Vs are extracted at room temperature under a 50% activation of channel donor impurities.