A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFETs

摘要

A new charge-pumping method has been developed to characterize the hot-carrier induced local damage. By holding the rising and falling slopes of the gate pulse constant and then varying the high-level (V/sub GH/) and base-level (V/sub GL/) voltages, the lateral distribution of interface-states (N/sub it/(x)) and oxide-trapped charges (Q/sub ox/(x)) can be profiled. The experimental results show that during extracting Q/sub ox/(x) after hot-carrier stress, a contradictory result occurs between the extraction methods by varing the high-level (V/sub GH/) and base-level (V/sub GL/) voltages. As a result, some modifications are made to eliminate the perturbation induced by the generated interface-states after hot-carrier stress for extracting Q/sub ox/(x).