Formation of HfSiON/SiO{sub}2/Si-Substrate Gate Stack With Low Leakage Current for High-Performance high-K MISFETs

摘要

The authors found the method to form HfSiON film with an ultrathin SiO{sub}2 interfacial layer on the Si substrate by oxidizing the HfSiN. The HfSiN film was deposited by using the metal-organic chemical vapor deposition reactor with the shower head, supplying metal (Hf and Si) precursors and NH{sub}3 gas separately from discharge nozzles. The authors successfully decreased the leakage current of the metal insulator semiconductor diode with HfSiON/SiO{sub}2 insulator of 1-nm equivalent oxide thickness to 0.036 A/cm{sup}2 at V{sub}(FB) - 1V.