High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

摘要

Novel uniaxially strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing lateral (uniaxial) strain-relaxation process on globally (biaxially) strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator pMOSFETs are observed in SGOI pMOSFET. This high mobility enhancement is maintained in high vertical effective fields as well as in short-channel devices. As a result, significant ION enhancement of 80% is demonstrated in 40-nm gate-length uniaxially strained SGOI pMOSFET