Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

摘要

In this work, we analyzed the subthreshold current (I{sub}D) of pocket implanted MOSFETs using extensive device simulations and experimental data. We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.