Measurement of Low-Noise Column Readout Circuits for CMOS Image Sensors

摘要

This brief describes the measurement results of high-gain column readout circuits for CMOS image sensors. The measurement results show that the double-stage noise-canceling architecture has better noise performance than that of the single-stage architecture at a first-stage gain of greater than 6. The lowest input-referred noise is measured to be 49 μV{sub}(rms) at a gain of 24.