A CMOS image sensor with 2.0-ē random noise and 110-kē full well capacity using column source follower readout circuits

摘要

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-¿V/e^- conversion gain, 2.0-e^- total random noise, 0.5-e^- in readout circuits, 110,000-e^- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.