A Simulation Study on Novel Field Stop IGBTs Using Superjunction

摘要

Performing device simulation, a novel insulated gate bipolar transistor (IGBT) that employs the superjunction as well as field stop (FS), has been investigated. For a planar 1200-V IGBT, the novel superjunction FS IGBT demonstrates the remarkable device performance such as the ON-state voltage drop of 1.6 V and switching-off energy of 20 μJ/A at the collector current density of 100 A/cm{sup}2, which is considered as the best tradeoff performance in its class. In addition, the impact of various design parameters on device performance has been explored, and a comprehensive analysis for understanding of the operating mechanism is presented, which will be of help for realizing the SJFS IGBTs with optimum design.