IGBT SIMULATION SYSTEM AND IGBT SIMULATION PROGRAM

摘要

PROBLEM TO BE SOLVED: To simulate the operation of IGBT with high precision.;SOLUTION: Currents I_E, I_C, and I_Drain of IGBT are represented using a potential difference V_EB at a junction part between an internal P+ (emitter) region 20 and an N (base) region 18, and are determined with Kirchhoff principle I_E=I_C+I_Drain about the current in the IGBT. Using the determined V_EB, the currents I_E, I_C, and I_Drain are acquired. A transitional current is determined based on the change amount of internal accumulated charges.;COPYRIGHT: (C)2009,JPO&INPIT