Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size

摘要

This paper presents results on low-temperature $(≪ hbox{500} ^{circ} hbox{C})$ multichannel poly-Si thin-film transistors (TFTs) prepared by KrF excimer laser annealing with a channel width that is