A Comprehensive Study of the Resistive Switching Mechanism in $hbox{Al/TiO}_{x}/hbox{TiO}_{2}/hbox{Al}$-Structured RRAM

摘要

The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of $hbox{Al}(hbox{top})/hbox{TiO}_{x}/hbox{TiO}_{2}/hbox{Al}( hbox{bottom})$ are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the $hbox{TiO}_{2}$ layer and induced an oxygen-deficient $hbox{TiO}_{x}$ layer near the TE. The naturally formed oxygen-deficient $hbox{TiO}_{x}$ layer was confirmed by a transmission-electron-microscope energy-dispersive X-ray spectrometry analysis. The oxygen-deficient $hbox{TiO}_{x}$ region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.