CMOS Fully Compatible Embedded Non-Volatile Memory System With $hbox{TiO}_{2}hbox{-SiO}_{2}$ Hybrid Resistive-Switching Material

摘要

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, $hbox{TiO}_{2}hbox{-}hbox{SiO}_{2}$, in a 0.18 $mu{rm m}$ node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the $hbox{TiO}_{2}$ based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin $hbox{SiO}_{2}$ layer between the bottom electrode and $hbox{TiO}_{2}$ film to enhance the Schottky barrier height, while maintaining $hbox{TiO}_{2}$ based RRAM characteristics.