AlGaN Schottky Diodes for Detector Applications in the UV Wavelength Range

摘要

In this paper, the performance of AlGaN extreme-ultraviolet (EUV) detectors is optimized by a combination of experimental results, TCAD simulations, and theoretical modeling. Using the verified thin-surface-barrier model, key issues in technology development are identified. A first conclusion is that reducing surface defects at the metal–AlGaN interface is found to reduce diode leakage considerably, hence improving detector sensitivity. Evaluating the benefit of a fingered Schottky contact results in a second conclusion, as a semitransparent fully covering Schottky contact is found to provide a good compromise between EUV sensitivity and reduced leakage. Both conclusions are supported by experimental results.