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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

机译：双异质结硅衬底上AlGaN / GaN肖特基势垒二极管的理论和实验研究

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摘要

Cross section of the proposed double-heterojunction AlGaN/GaN SBD and main fabrication process. is the length of anode to cathode. and are 1 μm and 2 μm, respectively. HR-TEM image of the anode after ICP and metal deposition

机译：拟议的双异质结AlGaN / GaN SBD的截面及其主要制造工艺。是阳极到阴极的长度。和分别为1μm和2μm。 ICP和金属沉积后阳极的HR-TEM图像

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期刊名称 Springer Open Choice
作者
Tao Sun; Xiaorong Luo; Jie Wei; Chao Yang; Bo Zhang;
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作者单位

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年(卷),期 -1(15),-1
年度 -1
页码 -1
总页数 8
原文格式 PDF
正文语种
中图分类外科学;
关键词
GaN; Schottky barrier diode (SBD); Breakdown voltage; Silicon substrate;

机译：GaN;肖特基势垒二极管（SBD）;击穿电压;硅衬底;

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专利

1. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction [J] . Tao Sun, Xiaorong Luo, Jie Wei, Nanoscale Research Letters . 2020,第1期

机译：双异质结上Si衬底AlGan / GaN肖特基势码的理论与实验研究
2. Ultra low reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate [J] . Xing Lu, Chao Liu, Huaxing Jiang, Applied physics express . 2016,第3期

机译：在块状GaN衬底上生长的AlGaN / GaN横向肖特基势垒二极管中的超低反向漏电流
3. AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking [J] . Lian, Y.-W., Lin, IEEE Electron Device Letters . 2013,第8期

机译：具有选择性Si扩散的硅衬底上的AlGaN / GaN肖特基势垒二极管，用于低起始电压和高反向阻断
4. High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination [C] . A. Kamada, K. Matsubayashi, A. Nakagawa, International Symposium on Power Semiconductor Devices ICS . 2008

机译：高压AlGaN / GaN肖特基屏障二极管在Si衬底上具有低温GaN帽的边缘终端
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics [O] . Yue Sun, Xuanwu Kang, Yingkui Zheng, 2020

机译：通过电感耦合等离子体（ICP）和器件特性优化准垂直GaN肖特基势垒二极管（SBD）的台面蚀刻
7. STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES [O] . LWIN MIN KYAW 2015

机译：硅（111）基质上的Algan / gan和Inaln / GAN二极管和高迁移率晶体管的CMOS相容氧化钌肖特基接触的研究

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

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