Applying Complementary Trap Characterization Technique to Crystalline $gamma$-Phase-$hbox{Al}_{2} hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

摘要

The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS $(hbox{TaN/Al}_{2}hbox{O}_{3}/hbox{Si}_{3}hbox{N}_{4}/ hbox{SiO}_{2}/hbox{Si})$, require detailed information on the energy and spatial distribution of the charge defects in both the nitride and the $hbox{Al}_{2}hbox{O}_{3}$ blocking dielectric. This paper focuses on the characterization of $ hbox{Al}_{2}hbox{O}_{3}$. We have successfully applied complementary trap characterization techniques to crystalline $gamma$-phase- $hbox{Al}_{2}hbox{O}_{3}$ in order to obtain a complete picture of the spatial and energetic distribution of the defect density. As a result, two defect types at energy levels 1.8 and 3.5 eV below the conduction band edge are found.