Thermal Annealing for Improving Gold Nano-particles Charge Trapping Layer Nonvolatile Memory Reliability Applications

摘要

This work reports a versatile technique for enhancing charge storage nonvolatile memory device using a direct assembly of gold-Nan particles (AuNPs) as a charge trapping layer and zinc oxide (ZnO) as semiconductor layer. We have used two types of linker to deposit AuNPs, which are 3-aminopropyltrimethoxysilane (APTMS) and 3-mercaptopropyltriethoxysilane (MPTES) followed by gold colloidal. Atomic force microscopy (AFM) image showed the surface morphology of the well-separated immobilized AuNPs on a SiO2/p-Si and the thermal annealing for improving nonvolatile memory has been research.