快速热退火处理ZnO电子传输层对聚合物太阳能电池性能的改善

摘要

采用快速热退火对ZnO薄膜进行后处理,制作了ITO/ZnO/PTB7∶PC71BM/MoO3/Ag结构的倒置聚合物太阳能电池,器件能量转换效率达到了8.1%,与传统热退火工艺相比提高了11.26%.通过原子力显微镜、扫描电子显微镜、X光衍射谱、透射光谱和荧光谱对不同退火条件下制备的ZnO薄膜进行表征和分析.结果表明,经快速热退火处理的ZnO薄膜具有良好的c轴取向结晶特性、较大的晶粒尺寸和表面粗糙度,有效地降低了器件的串联电阻Rs,增大了器件的短路电流Jsc和填充因子FF.%ZnO film was commonly used as electron transporting layer(ETL) in inverted polymer solar cell (IPSC) due to its excellent performance.Here, rapid thermal annealing(RTA) was applied to treat the ZnO ETL, and IPSCs with the structure of ITO/ZnO/PTB7∶PC71BM/MoO3/Ag were prepared.The ZnO films prepared under different annealing conditions were characterized by atomic force microscopy, scanning electron microscopy, X-ray diffraction ,UV-Vis-NIR transmission and photoluminescence (PL) spectra.The power-conversion efficiency (PCE) of IPSC using RTA treated ZnO as electronic transporting layer (ETL) is 8.1%, which is 11.26% higher than that of IPSC with ETL treated by traditional thermal annealing.The ZnO films treated by RTA have good crystalline properties, large grain size and rough surface, which decrease the series resistor (Rs) and increase the short-circuit current density (Jsc), fill factor (FF) of IPEC.