Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers

摘要

The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to $-hbox{40} ^{circ}hbox{C}$, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrödinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.