Characteristics of $hbox{Si/SiO}_{2}$ Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

摘要

In this paper, for the hybrid orientation technology (HOT), we propose a modified amorphization/templated recrystallization (ATR) process to improve the material quality. The characterization of $hbox{Si/SiO}_{2}$ interface properties for complementary metal–oxide–semiconductor (CMOS) devices fabricated on HOT wafers is demonstrated through charge pumping (CP) and low-frequency $(hbox{1}/f)$ noise measurements simultaneously. For n-type metal–oxide–semiconductor field-effect transistors (nMOSFETs), devices with the increased defect-removal annealing time bring out a significant decrease in the CP current and the $hbox{1}/f$ noise. The results indicate that ATR-induced defects are further repaired and consequently achieve a well $hbox{Si/SiO}_{2}$ interface. In addition, the driving current improvement is observed in devices with a small dimension utilizing the modified ATR process. For p-type MOSFETs (pMOSFETs), the direct-current characteristic, CP, and $hbox{1}/f$ noise results are comparable between both HOT wafers. It means that the modified process would not affect bonded (110) regions and degrade the device performance. Hence, this modified process could be adopted to improve the fabrication of the CMOS on the HOT wafer using the ATR method. Moreover, the physical origins of the $hbox{1}/f$ noise is attributed to a fluctuation in the mobility of free carriers for pMOSFETs and a unified model, incorporating both the carrier-number and correlated mobility fluctuations, for nMOSFETs.