Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices

摘要

We present electrical data of silicon single-electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at $T = hbox{30} hbox{mK}$ and a charge offset drift of 0.01$e$ over eight days. In addition, the devices exhibit robust transistor characteristics, including uniformity within about $pm$0.25 V in the threshold voltage, gate resistances greater than 10 $hbox{G}Omega$, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a silicon-foundry-compatible process for single-electron device fabrication.