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Room temperature-operating single-electron device and the fabrication method thereof
Room temperature-operating single-electron device and the fabrication method thereof
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机译:室温操作单电子器件及其制造方法
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摘要
The present invention relates to a room temperature-operating single-electron device and a fabrication method thereof, and more particularly, to a room temperature-operating single-electron device in which a plurality of metal silicide dots formed serially is used as multiple quantum dots, and a fabrication method thereof.
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