Fabrication method of room temperature-operating Single-Electron Device

摘要

PURPOSE: A room temperature-operating single-electron device and a method for manufacturing the same are provided to reduce the electronic capacity of the single-electron device by serially forming a plurality of silicide quantum dots between a source and a drain. CONSTITUTION: An insulation layer(11) and a silicon layer are successively stacked on a silicon substrate(12). The silicon layer is etched to form an active area(10a). An impurity ion is injected into a part of the active area to form a source area and a drain region. A silicon oxide layer is formed on the upper front surface of the silicon substrate. The channel part of the active area is etched to form a silicide trench. An oxide layer and a metal layer are successively stacked on the whole upper surface of the silicon substrate. The metal layer is removed to form a silicide quantum dot(41).