A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

摘要

In this paper, a surface potential-based gate-leakage current (GLC) model for organic thin-film transistors is proposed. It is found that the Poole–Frenkel emission is the main mechanism of GLC, which can be well described by our model for both accumulation and depletion modes. In addition, the source and drain partitions of the channel leakage current can be well explained based on our model. Furthermore, the dependence of GLC on drain voltage, temperature, and material disorder has been discussed in detail, which yields perfect agreement with the experimental data.