基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

摘要

栅绝缘层的表面性质对有机场效应晶体管（OFETs）的半导体薄膜的形貌、晶粒生长的有序性和载流子的传输有着重大的影响．研究表明，通过改进栅绝缘层的表面性质，可以有效提高有机场效应晶体管的迁移率．本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响，重点探讨了栅绝缘层表面修饰常用的方法，即自组装单层（SAMs）修饰和聚合物修饰与迁移率改进之间的研究进展．最后，展望了该研究方向未来可能的发展趋势．%The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.