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A src='/images/tex/21769.gif' alt='mu '> -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

机译:一个 src =“ / images / tex / 21769.gif” alt =“ mu”> -基于控制器的系统,用于连接无选择器RRAM交叉开关阵列

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摘要

Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance () measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing measurement accuracy. We calibrated the mCAT using a custom-made discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone in the range of 1 to 1 with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform’s limitations have been quantified using large-scale nonideal crossbar simulations.
机译:电阻式随机存取存储器(RRAM)的无选择器交叉开关阵列,也称为忆阻器,在工作期间传导大的潜电流,这会严重破坏交叉点模拟电阻()的测量精度。为了缓解此问题,我们设计,构建和测试了忆阻器表征与测试(mCAT)仪器,该仪器可强制交叉开关阵列内的潜电流进行重新分配,从而大大提高了测量精度。我们使用定制的离散电阻式交叉开关阵列对mCAT进行了校准,随后在相同尺寸的晶圆和封装的固态TiO RRAM阵列上展示了其功能。我们的平台可以独立测量1到1范围内的误差,误差小于1%。对于我们的定制电阻式交叉开关,测量了90%相同电阻范围的器件,误差小于10%。该平台的局限性已通过大规模的非理想交叉开关模拟得以量化。

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