机译:快速3-D TCAD器件/电路电热仿真和功率HEMT的分析的高级方法
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia;
III-V semiconductors; aluminium compounds; equivalent circuits; finite element analysis; gallium compounds; indium compounds; power HEMT; semiconductor device models; technology CAD (electronics); 2D FEM simulations; 3D TCAD electrothermal simulation; 3D technology computer aided design; InAlN-GaN; Synopsys TCAD Sentaurus; circuit electrical simulation; compact model interface; equivalent circuit model; finite element method; mixed-mode setup; power high-electron mobility transistor; Analytical models; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; Mathematical model; Solid modeling; 3-D electrothermal simulation; TCAD modeling; TCAD modeling.; high-electron mobility transistor (HEMT) equivalent circuit model; power HEMT;
机译:基于SDevice和HSPICE相互作用的功率超结MOSFET快速3-D电热器件/电路仿真。
机译:有效的3D器件电热仿真支持的多指功率HEMT分析
机译:TCAD仿真功能可用于高级AlGaN / GaN HEMT器件的栅极泄漏电流分析
机译:包括封装在内的功率HEMT的快速3-D TCAD电热仿真的先进方法
机译:基于Monte Carlo的集成,针对大功率微波设备应用对氮化镓HEMT进行了仿真分析。
机译:用TCAD工具对生物传感设备的ISFET结构进行数值模拟
机译:基于电路的超高速非线性mOR方法对功率器件的电热仿真